Main Sector of relevance\IRC classification 8. Industrial Manufacturing, Material and Transport Technologies

8.73 High-conductivity ceramic material “Alnit” on the basis of aluminium nitride

Developers’ contact information

SSPA “The Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus”
19, P. Brovka Str., 220072 Minsk

Summary

High-conductivity ceramic material “Alnit” on the basis of aluminium nitride.
The material can be used as substratum of hybrid integrated circuits, as the holder of microwave transistors instead of high-toxic ceramics on the basis of beryllium oxide, and for resistor core manufacturing. The material obtaining method is highly productive and eliminates the need for binders and additives that trigger the process of sintering. This provides high density and thermal conductivity of ceramics on the basis of aluminium nitride 4-6 times higher than that of the known materials composed of aluminium oxide. In contrast to beryllium oxide, it is non-toxic, and has a low cost. The method of material production is protected by copyright certificates and patents.

Description

The material can be manufactured in plates with the diameter of 10-26 mm and thickness of 1-5 mm, and has the following characteristics:
Thermal conductivity, W/(m.K) - 185
Dielectric conductivity - 8-12
Electrical resistivity, Ohm.cm - 10¹³
Density, g/cm³ - 3.25
Microhardness, hPa - 16.5-18
Vickers hardness, hPa - 14.

Technology type

• Material

Technical advantages and economic benefits

The obtaining method is highly productive and eliminates the need for binders and additives that trigger the process of sintering. It provides high density and thermal conductivity of ceramics based on aluminium nitride.

Technology differentiation and uniqueness

—

Context in which technology was identified

Germany 1998, Hannover, 2005, etc.

Technological keywords

Sintering under high pressure, aluminium nitride, refractory ceramic materials.

Development Stage

• Prototype
• Experimental development stage
• Results of demonstration test available

Intellectual property rights

• Patent pending
• Secret know-how
• Specific Patent Information:
  Patent 1489124, Russia, MKI⁴ C 04 35/58. Method of obtaining high material from aluminium nitride. Not supported.

Range of applications

The material can be used as substratum of hybrid integrated circuits, as the holder of microwave transistors, resistors resistor cores.

Classifier Used at the EU Innovation Relay Centres

• Industrial Manufacturing, Material and Transport Technologies

Preferable Regions

• South America
• Europe
• Asia
• Africa

Practical experience

Practical use of individual samples.

Environmental impact

None.

Type of collaboration sought

• Venture funding
• R&D contract
• For sale

Terms and restrictions

Separate know-how agreement.

Available technical assistance

• Documentation
• Other:
  Consultation.